Step motion and As desorption on InAs(001) surfaces observed by scanning tunneling microscopy
- Author
- YAMAGUCHI, H; HORIKOSHI, Y
NTT Basic Research Laboratories, Musashino-shi, Tokyo 180, Japan - Source
Physical review. B, Condensed matter. 1993, Vol 48, Num 4, pp 2807-2810 ; ref : 25 ref
- CODEN
- PRBMDO
- ISSN
- 0163-1829
- Scientific domain
- Crystallography; Metallurgy, welding; Condensed state physics
- Publisher
- American Institute of Physics, Woodbury, NY
/
American Physical Society, Woodbury, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Domaine température 273-400 K Domaine température 400-1000 K Dépendance température Etude expérimentale Gradin Indium arséniure MTB Matériau semiconducteur Mouvement défaut cristallin Structure surface As In InAs Composé minéral
- Keyword (en)
- Temperature range 273-400 K Temperature range 400-1000 K Temperature dependence Experimental study Step Indium arsenides STM Semiconductor materials Crystal defect motion Surface structure Inorganic compounds
- Keyword (es)
- Peldaño Movimiento defecto cristalino
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A16 Electron, ion, and scanning probe microscopy / 001B60A16C Scanning probe microscopy: scanning tunneling, atomic force, scanning optical, magnetic force, etc
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H35 Solid surfaces and solid-solid interfaces / 001B60H35B Surface structure and topography
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3766950
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1103/PhysRevB.48.2807 
https://dx.doi.org/10.1103/PhysRevB.48.2807
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