Structural properties of silicon epitaxy grown at 200-600°C by electron-beam evaporation in an ultrahigh vacuum system
- Author
- TRI-RUNG YEW; YUNG-JEN LIN; MING-DENG SHIEH; CHENG-HSIEN CHEN
National Tsing-Hua univ., materials sci. cent., Hsinchu, Taiwan, Province of China - Source
Journal of applied physics. 1993, Vol 73, Num 10, pp 4932-4936 ; 1 ; ref : 7 ref
- CODEN
- JAPIAU
- ISSN
- 0021-8979
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics; Physics
- Publisher
- American Institute of Physics, Woodbury, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Analyse chimique structurale Couche mince Croissance cristalline Epitaxie Etude expérimentale Evaporation faisceau électronique Interface solide solide MET Matériau semiconducteur Mode opératoire Nettoyage RHEED Silicium Ultravide Si Non métal
- Keyword (en)
- Structural chemical analysis Thin films Crystal growth Epitaxy Experimental study Electron beam evaporation Solid-solid interfaces TEM Semiconductor materials Operating mode Cleaning RHEED Silicon Ultrahigh vacuum Nonmetals
- Keyword (es)
- Método operatorio
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology / 001B60H55J Structure and morphology; thickness
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3772910
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.353811 
https://dx.doi.org/10.1063/1.353811
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