Surface electron-diffraction patterns of β-FeSi2 films epitaxially grown on silicon
- Author
- MAHAN, J. E1 ; LE THANH, V1 ; CHEVRIER, J1 ; BERBEZIER, I1 ; DARRIEN, J1 ; LONG, R. G
[1] CNRS, cent. rech. mécanismes croissance cristalline, 13288 Marseille, France - Source
Journal of applied physics. 1993, Vol 74, Num 3, pp 1747-1761 ; ref : 15 ref
- CODEN
- JAPIAU
- ISSN
- 0021-8979
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics; Physics
- Publisher
- American Institute of Physics, Woodbury, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Croissance cristalline Diagramme diffraction Epitaxie Etude expérimentale Fer siliciure Hétérojonction MET Orientation cristalline RHEED Relation orientation Fe Si FeSi2 Composé minéral Métal transition composé
- Keyword (en)
- Crystal growth Diffraction pattern Epitaxy Experimental study Iron silicides Heterojunctions TEM Crystal orientation RHEED Orientation relation Inorganic compounds Transition element compounds
- Keyword (es)
- Diagrama difracción Relación orientación
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A14 Electron diffraction and scattering / 001B60A14H Low-energy electron diffraction (leed) and reflection high-energy electron diffraction (rheed)
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15K Vapor phase epitaxy; growth from vapor phase
- Discipline
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3786573
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.354804 
https://dx.doi.org/10.1063/1.354804
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