Strong blue light emission from an oxygen-containing Si fine structure
- Author
- MORISAKI, H; HASHIMOTO, H; PING, F. W; NOZAWA, H; ONO, H
Univ. electro-communications, Chofu-shi, Tokyo 182, Japan - Source
Journal of applied physics. 1993, Vol 74, Num 4, pp 2977-2979 ; ref : 8 ref
- CODEN
- JAPIAU
- ISSN
- 0021-8979
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics; Physics
- Publisher
- American Institute of Physics, Woodbury, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Domaine température 273-400 K Domaine température 400-1000 K Dépendance température Etude expérimentale Oxydation Particule fine Photoluminescence Silicium
- Keyword (en)
- Temperature range 273-400 K Temperature range 400-1000 K Temperature dependence Experimental study Oxidation Fine particle Photoluminescence Silicon
- Keyword (es)
- Partícula fina
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H55 Photoluminescence / 001B70H55H Other solid inorganic materials
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3795400
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.354609 
https://dx.doi.org/10.1063/1.354609
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