Octadecyltrichlorosilane monolayers as ultrathin gate insulating films in metal-insulator-semiconductor devices
- Author
- FONTAINE, P1 ; GOGUENHEIM, D1 ; DERESMES, D1 ; VUILLAUME, D1 ; GARET, M2 ; RONDELEZ, F2
[1] CNRS, inst. supérieur electronique Nord, inst. electronique microélectronique Nord, 59046 Lille, France
[2] CNRS, inst. Curie, sect. physique chimie, 75231 Paris, France - Source
Applied physics letters. 1993, Vol 62, Num 18, pp 2256-2258 ; ref : 21 ref
- CODEN
- APPLAB
- ISSN
- 0003-6951
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics
- Publisher
- American Institute of Physics, Melville, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Caractéristique électrique Composé organique Condensateur Couche monomoléculaire Dispositif couche mince Effet température Etude expérimentale Fabrication microélectronique Greffage Propriété électronique Recuit Silicium Structure MIS Transistor effet champ Silane (stéaryl trichloro)
- Keyword (en)
- Electrical characteristic Organic compounds Capacitor Monolayer Thin film device Temperature effect Experimental study Microelectronic fabrication Grafting Electronic properties Annealing Silicon MIS structure Field effect transistor
- Keyword (es)
- Característica eléctrica Compuesto orgánico Condensador Capa monomolecular Dispositivo capa delgada Efecto temperatura Estudio experimental Fabricación microeléctrica Injerto Propiedad electrónica Recocido Silicio Estructura MIS Transistor efecto campo
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F02 Compound structure devices
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3810231
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.109433 
https://dx.doi.org/10.1063/1.109433
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