Study of submicron InP transferred electron devices
- Author
- WU, K. F; CZEKAJ, J; SHAW, M. P
Wayne State univ., dep. electrical computer eng., Detroit MI 48202, United States - Source
Journal of applied physics. 1993, Vol 74, Num 1, pp 315-326 ; ref : 30 ref
- CODEN
- JAPIAU
- ISSN
- 0021-8979
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics; Physics
- Publisher
- American Institute of Physics, Woodbury, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Caractéristique électrique Contact électrique Dispositif transfert électron Effet dimensionnel Efficacité Fréquence oscillation Indium Phosphure Métal Alliage Résultat expérimental Simulation numérique Submicromètre Conversion dc/ac In P InP
- Keyword (en)
- Electrical characteristic Electric contact Transferred electron device Size effect Efficiency Oscillation frequency Indium Phosphides Metal Alloys Experimental result Numerical simulation Submicrometer
- Keyword (es)
- Característica eléctrica Contacto eléctrico Dispositivo transferencia electrón Efecto dimensional Eficacia Frecuencia oscilación Indio Fosfuro Metal Aleación Resultado experimental Simulación numérica Submicrómetro
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F08 Microwave and submillimeter wave devices, electron transfer devices
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3818874
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.354110 
https://dx.doi.org/10.1063/1.354110
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