Structure of Ga0.47In0.53As epitaxial layers grown on InP substrates at different temperatures
- Author
- ZAKHAROV, N. D1 ; LILIENTAL-WEBER, Z1 ; SWIDER, W1 ; BROWN, A. S; METZGER, R
[1] Univ. California, cent. advanced materials, Lawrence Berkeley lab., Berkeley CA 94720, United States - Source
Applied physics letters. 1993, Vol 63, Num 20, pp 2809-2811 ; ref : 12 ref
- CODEN
- APPLAB
- ISSN
- 0003-6951
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics
- Publisher
- American Institute of Physics, Melville, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Composé ternaire Domaine température 400-1000 K Dépendance température Epitaxie jet moléculaire Etude expérimentale Gallium arséniure Indium arséniure Matériau semiconducteur Précipité Recuit thermique Structure défaut Surface Ségrégation As Ga In Ga0,47In0,53As Composé minéral
- Keyword (en)
- Ternary compounds Temperature range 400-1000 K Temperature dependence Molecular beam epitaxy Experimental study Gallium arsenides Indium arsenides Semiconductor materials Precipitates Thermal annealing Defect structure Surfaces Segregation Inorganic compounds
- Keyword (es)
- Recocido térmico
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H35 Solid surfaces and solid-solid interfaces
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A40 Treatment of materials and its effects on microstructure and properties / 001B80A40E Cold working, work hardening; annealing, quenching, tempering, recovery, and recrystallization; textures
- Pacs
- 8140E Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
- Discipline
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3848956
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.110294 
https://dx.doi.org/10.1063/1.110294
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