Stretched exponential relaxation of persistent photoconductivity due to the Si-related DX centre in AlxGa1-xAs
- Author
- GHOSH, S; KUMAR, V
Indian inst. sci., dep. physics, Bangalore 560012, India - Source
Europhysics letters (Print). 1993, Vol 24, Num 9, pp 779-784 ; ref : 26 ref
- CODEN
- EULEEJ
- ISSN
- 0295-5075
- Scientific domain
- Optics; Atomic molecular physics; Condensed state physics; Physics
- Publisher
- EDP sciences, Les Ulis
- Publication country
- France
- Document type
- Article
- Language
- English
- Keyword (fr)
- Addition silicium Aluminium arséniure Composé ternaire Diffusion(transport) Donneur Dépendance température Energie activation Etude expérimentale Gallium arséniure Matériau semiconducteur Photoconductivité Relaxation Temps relaxation Al As Ga AlxGa1-xAs Centre DX Composé minéral
- Keyword (en)
- Silicon additions Aluminium arsenides Ternary compounds Diffusion Donors Temperature dependence Activation energy Experimental study Gallium arsenides Semiconductor materials Photoconductivity Relaxation Relaxation time Inorganic compounds
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60F Transport properties of condensed matter (nonelectronic) / 001B60F30 Diffusion in solids / 001B60F30L Diffusion of other defects
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70B Electronic transport in condensed matter / 001B70B40 Photoconduction and photovoltaic effects; photodielectric effects
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3850289
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1209/0295-5075/24/9/014 
https://dx.doi.org/10.1209/0295-5075/24/9/014
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:26:\"10.1209\/0295-5075\/24\/9\/014\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:110:\"Stretched exponential relaxation of persistent photoconductivity due to the Si-related DX centre in AlxGa1-xAs\";s:9:\"\u0000*\u0000jtitle\";s:27:\"Europhysics letters (Print)\";s:9:\"\u0000*\u0000stitle\";s:23:\"Europhys. lett. (Print)\";s:7:\"\u0000*\u0000date\";s:4:\"1993\";s:9:\"\u0000*\u0000volume\";s:2:\"24\";s:8:\"\u0000*\u0000issue\";s:1:\"9\";s:8:\"\u0000*\u0000spage\";s:3:\"779\";s:8:\"\u0000*\u0000epage\";s:3:\"784\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0295-5075\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"GHOSH\";s:10:\"\u0000*\u0000aufirst\";s:1:\"S\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:8:\"KUMAR, V\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"EULEEJ\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:110:\"Stretched exponential relaxation of persistent photoconductivity due to the Si-related DX centre in AlxGa1-xAs\";s:8:\"\u0000*\u0000place\";s:8:\"Les Ulis\";s:6:\"\u0000*\u0000pub\";s:12:\"EDP sciences\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:26:\"10.1209\/0295-5075\/24\/9\/014\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:110:\"Stretched exponential relaxation of persistent photoconductivity due to the Si-related DX centre in AlxGa1-xAs\";s:9:\"\u0000*\u0000jtitle\";s:27:\"Europhysics letters (Print)\";s:9:\"\u0000*\u0000stitle\";s:23:\"Europhys. lett. (Print)\";s:7:\"\u0000*\u0000date\";s:4:\"1993\";s:9:\"\u0000*\u0000volume\";s:2:\"24\";s:8:\"\u0000*\u0000issue\";s:1:\"9\";s:8:\"\u0000*\u0000spage\";s:3:\"779\";s:8:\"\u0000*\u0000epage\";s:3:\"784\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0295-5075\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"GHOSH\";s:10:\"\u0000*\u0000aufirst\";s:1:\"S\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:8:\"KUMAR, V\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"EULEEJ\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:110:\"Stretched exponential relaxation of persistent photoconductivity due to the Si-related DX centre in AlxGa1-xAs\";s:8:\"\u0000*\u0000place\";s:8:\"Les Ulis\";s:6:\"\u0000*\u0000pub\";s:12:\"EDP sciences\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:26:\"10.1209\/0295-5075\/24\/9\/014\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:26:\"10.1209\/0295-5075\/24\/9\/014\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:110:\"Stretched exponential relaxation of persistent photoconductivity due to the Si-related DX centre in AlxGa1-xAs\";s:9:\"\u0000*\u0000jtitle\";s:27:\"Europhysics letters (Print)\";s:9:\"\u0000*\u0000stitle\";s:23:\"Europhys. lett. (Print)\";s:7:\"\u0000*\u0000date\";s:4:\"1993\";s:9:\"\u0000*\u0000volume\";s:2:\"24\";s:8:\"\u0000*\u0000issue\";s:1:\"9\";s:8:\"\u0000*\u0000spage\";s:3:\"779\";s:8:\"\u0000*\u0000epage\";s:3:\"784\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0295-5075\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"GHOSH\";s:10:\"\u0000*\u0000aufirst\";s:1:\"S\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:8:\"KUMAR, V\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"EULEEJ\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:110:\"Stretched exponential relaxation of persistent photoconductivity due to the Si-related DX centre in AlxGa1-xAs\";s:8:\"\u0000*\u0000place\";s:8:\"Les Ulis\";s:6:\"\u0000*\u0000pub\";s:12:\"EDP sciences\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:26:\"10.1209\/0295-5075\/24\/9\/014\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:110:\"Stretched exponential relaxation of persistent photoconductivity due to the Si-related DX centre in AlxGa1-xAs\";s:9:\"\u0000*\u0000jtitle\";s:27:\"Europhysics letters (Print)\";s:9:\"\u0000*\u0000stitle\";s:23:\"Europhys. lett. (Print)\";s:7:\"\u0000*\u0000date\";s:4:\"1993\";s:9:\"\u0000*\u0000volume\";s:2:\"24\";s:8:\"\u0000*\u0000issue\";s:1:\"9\";s:8:\"\u0000*\u0000spage\";s:3:\"779\";s:8:\"\u0000*\u0000epage\";s:3:\"784\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0295-5075\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"GHOSH\";s:10:\"\u0000*\u0000aufirst\";s:1:\"S\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:8:\"KUMAR, V\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"EULEEJ\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:110:\"Stretched exponential relaxation of persistent photoconductivity due to the Si-related DX centre in AlxGa1-xAs\";s:8:\"\u0000*\u0000place\";s:8:\"Les Ulis\";s:6:\"\u0000*\u0000pub\";s:12:\"EDP sciences\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:26:\"10.1209\/0295-5075\/24\/9\/014\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:110:\"Stretched exponential relaxation of persistent photoconductivity due to the Si-related DX centre in AlxGa1-xAs\";s:9:\"\u0000*\u0000jtitle\";s:27:\"Europhysics letters (Print)\";s:9:\"\u0000*\u0000stitle\";s:23:\"Europhys. lett. (Print)\";s:7:\"\u0000*\u0000date\";s:4:\"1993\";s:9:\"\u0000*\u0000volume\";s:2:\"24\";s:8:\"\u0000*\u0000issue\";s:1:\"9\";s:8:\"\u0000*\u0000spage\";s:3:\"779\";s:8:\"\u0000*\u0000epage\";s:3:\"784\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0295-5075\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"GHOSH\";s:10:\"\u0000*\u0000aufirst\";s:1:\"S\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:1:{i:0;s:8:\"KUMAR, V\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"EULEEJ\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:110:\"Stretched exponential relaxation of persistent photoconductivity due to the Si-related DX centre in AlxGa1-xAs\";s:8:\"\u0000*\u0000place\";s:8:\"Les Ulis\";s:6:\"\u0000*\u0000pub\";s:12:\"EDP sciences\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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