Carrier escape mechanisms from GaAs/AlxGa1-xAs multiple quantum wells in an electric field
- Author
- FOX, A. M1 ; ISPASOIU, R. G1 ; FOXON, C. T; CUNNINGHAM, J. E; YAN, W. Y
[1] Univ. Oxford, dep. physics, Clarendon lab., Oxford OX1 3PU, United Kingdom - Source
Applied physics letters. 1993, Vol 63, Num 21, pp 2917-2919 ; ref : 15 ref
- CODEN
- APPLAB
- ISSN
- 0003-6951
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics
- Publisher
- American Institute of Physics, Melville, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Aluminium arséniure Caractéristique courant tension Composé binaire Composé ternaire Effet champ électrique Effet température Effet tunnel Emission Etude expérimentale Gallium arséniure Impureté Matériau semiconducteur Photoconductivité Porteur charge Puits quantique Superréseau Traitement thermique Trou Al As Ga AlxGa1-xAs As Ga GaAs Composé minéral
- Keyword (en)
- Aluminium arsenides IV characteristic Binary compounds Ternary compounds Electric field effects Temperature effects Tunnel effect Emission Experimental study Gallium arsenides Impurities Semiconductor materials Photoconductivity Charge carriers Quantum wells Superlattices Heat treatments Holes Inorganic compounds
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C40 Electronic transport in interface structures / 001B70C40G Tunneling
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C40 Electronic transport in interface structures / 001B70C40K Iii-v semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3862779
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.110272 
https://dx.doi.org/10.1063/1.110272
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