Strain relaxation in high-speed p-i-n photodectors with In0.2Ga0.8As/GaAs multiple quantum wells
- Author
- BENDER, G; LARKINS, E. C; SCHNEIDER, H; RALSTON, J. D; KOIDL, P
Fraunhofer-Inst. Angewandte Festkoperphysik, 79108 Freiburg i. Br., Germany - Source
Applied physics letters. 1993, Vol 63, Num 21, pp 2920-2922 ; ref : 13 ref
- CODEN
- APPLAB
- ISSN
- 0003-6951
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics
- Publisher
- American Institute of Physics, Melville, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Gallium arséniure Indium arséniure Photodétecteur Puits quantique multiple Relaxation réseau As Ga In As Ga Ga As In Ga As
- Keyword (en)
- Gallium arsenides Indium arsenides Photodetectors Multiple quantum well Lattice relaxation
- Keyword (es)
- Pozo cuántico múltiple
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B00 General / 001B00G Instruments, apparatus, components and techniques common to several branches of physics and astronomy / 001B00G57 Infrared, submillimeter wave, microwave and radiowave instruments, equipment and techniques / 001B00G57K Bolometer; infrared, submillimeter wave, microwave and radiowave receivers and detectors
- Discipline
- Metrology
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3868714
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.110273 
https://dx.doi.org/10.1063/1.110273
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