Surface passivation of GaAs using ArF excimer laser in a H2S gas ambient
- Author
- YOSHIDA, N1 ; CHICHIBU, S1 ; AKANE, T1 ; TOTSUKA, M1 ; UJI, H1 ; MATSUMOTO, S1 ; HIGUCHI, H
[1] Keio univ., fac. sci. technology, dep. electrical eng., 3-14-1 Hiyoshi, Yokohama 223, Japan - Source
Applied physics letters. 1993, Vol 63, Num 22, pp 3035-3037 ; ref : 23 ref
- CODEN
- APPLAB
- ISSN
- 0003-6951
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics
- Publisher
- American Institute of Physics, Melville, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Atmosphère contrôlée Composé binaire Etude expérimentale Gallium arséniure Matériau semiconducteur Passivation Procédé voie sèche Rayonnement laser Traitement surface As Ga GaAs Composé minéral
- Keyword (en)
- Controlled atmospheres Binary compounds Experimental study Gallium arsenides Semiconductor materials Passivation Dry process Laser radiation Surface treatments Inorganic compounds
- Keyword (es)
- Procedimiento vía seca
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H45 Solid-fluid interfaces
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3878540
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.110250 
https://dx.doi.org/10.1063/1.110250
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