Submicron particles observed during etching process
- Author
- MORITA, Y1 ; YAMAGUCHI, M1 ; IIDA, S1 ; NITAMI, K
[1] USHIO Inc., PRM Project, systems div., Gotenba, Shizuoka 412, Japan - Source
Japanese journal of applied physics. 1993, Vol 32, Num 7, pp 3140-3147 ; 1 ; ref : 19 ref
- CODEN
- JJAPA5
- ISSN
- 0021-4922
- Scientific domain
- Crystallography; Optics; Condensed state physics; Physics; Plasma physics
- Publisher
- Japanese journal of applied physics, Tokyo
- Publication country
- Japan
- Document type
- Article
- Language
- English
- Keyword (fr)
- Chambre à vide Circuit VLSI Circuit intégré Composé binaire Comptage particule Contamination Fabrication microélectronique Gravure ionique réactive Microscopie électronique balayage Monitorage Particule sous micronique Photorésist Semiconducteur Silice O Si SiO2
- Keyword (en)
- Vacuum chamber VLSI circuit Integrated circuit Binary compound Particle counting Contamination Microelectronic fabrication Reactive ion etching Scanning electron microscopy Monitoring Submicron particle Photoresist Semiconductor materials Silica
- Keyword (es)
- Cámara de vacío Circuito VLSI Circuito integrado Compuesto binario Contaje partícula Contaminación Fabricación microeléctrica Grabado iónico reactivo Microscopía electrónica barrido Monitoreo Partícula submicrónica Fotorresistente Semiconductor(material) Sílice
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3880033
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1143/JJAP.32.3140 
https://dx.doi.org/10.1143/JJAP.32.3140
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