Structure of (001) GaAs surfaces during epitaxial growth by organometallic chemical vapor deposition
- Author
- KAMIYA, I1 ; TANAKA, H; ASPNES, D. E; KOZA, M; BHAT, R
[1] Univ. Illinois, dep. physics, Urbana IL 61801, United States - Source
Applied physics letters. 1993, Vol 63, Num 23, pp 3206-3208 ; ref : 13 ref
- CODEN
- APPLAB
- ISSN
- 0003-6951
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics
- Publisher
- American Institute of Physics, Melville, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- CVD Coefficient réflexion Composé binaire Croissance cristalline Epitaxie Etude expérimentale Gallium arséniure Matériau semiconducteur Méthode couche atomique Ordre courte distance Ordre longue distance Pression atmosphérique Structure surface As Ga GaAs Composé minéral Composé organométallique
- Keyword (en)
- CVD Reflectance Binary compounds Crystal growth Epitaxy Experimental study Gallium arsenides Semiconductor materials Atomic layer method Short-range order Long-range order Atmospheric pressure Surface structure Inorganic compounds Organometallic compounds
- Keyword (es)
- Coeficiente reflexión Método capa atómica
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H35 Solid surfaces and solid-solid interfaces / 001B60H35B Surface structure and topography
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
- Discipline
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3880148
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.110200 
https://dx.doi.org/10.1063/1.110200
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