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Monte Carlo study of 50 nm-long single and dual-gate MODFETs : suppression of short-channel effects : Microelectronics and optoelectronics III-V

Author
DOLLFUS, P; HESTO, P; GALDIN, S; BRISSET, C
CNRS Univ. Paris XI, inst. electronique fondamentale, 91405 Orsay, France
Conference name
Journées nationales microélectronique et optoélectronique III-V (4 ; La Grande Motte 1992-10-21)
Source

Journal de physique. III (Print). 1993, Vol 3, Num 9, pp 1719-1728 ; ref : 13 ref

ISSN
1155-4320
Scientific domain
Mechanics acoustics; Condensed state physics; Plasma physics
Publisher
Editions de physique, Les Ulis
Publication country
France
Document type
Conference Paper
Language
English
Keyword (fr)
Caractéristique courant tension Dispositif semiconducteur Fréquence coupure Méthode Monte Carlo Simulation ordinateur Transconductance Transistor mobilité électron élevée
Keyword (en)
Voltage current curve Semiconductor device Cut off frequency Monte Carlo method Computer simulation Transconductance High electron mobility transistor
Keyword (es)
Característica corriente tensión Dispositivo semiconductor Frecuencia corte Método Monte Carlo Simulación computadora Transconductancia Transistor movibilidad elevada electrones
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
3887846

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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