Surface morphology of Si on Si(100) grown below 500 °C using H/Cl exchange chemistry
- Author
- KOLESKE, D. D; GATES, S. M
IBM, T. J. Watson res. cent., Yorktown Heights NY 10598, United States - Source
Journal of applied physics. 1993, Vol 74, Num 6, pp 4245-4247 ; ref : 23 ref
- CODEN
- JAPIAU
- ISSN
- 0021-8979
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics; Physics
- Publisher
- American Institute of Physics, Woodbury, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Couche mince Croissance cristalline Echange chimique Epitaxie Etude expérimentale Homoépitaxie Matériau semiconducteur Méthode couche atomique RHEED Silicium Structure surface Si Non métal
- Keyword (en)
- Thin films Crystal growth Chemical exchange Epitaxy Experimental study Homoepitaxy Semiconductor materials Atomic layer method RHEED Silicon Surface structure Nonmetals
- Keyword (es)
- Intercambio químico Homoepitaxia Método capa atómica
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H35 Solid surfaces and solid-solid interfaces / 001B60H35B Surface structure and topography
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology / 001B60H55J Structure and morphology; thickness
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3896082
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.354433 
https://dx.doi.org/10.1063/1.354433
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