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Peculiarities of photoelectrical properties of bismuth oxide films

Author
AGASIEV, A. A; GUSEINOV, Y. YU
Baku State univ., Baku 370 145, Azerbaijan
Source

Physica status solidi. A. Applied research. 1993, Vol 136, Num 2, pp 473-482 ; ref : 13 ref

CODEN
PSSABA
ISSN
0031-8965
Scientific domain
Crystallography; Electronics; Metallurgy, welding; Condensed state physics
Publisher
Wiley-VCH, Berlin
Publication country
Germany
Document type
Article
Language
English
Keyword (fr)
Barrière potentiel Bismuth oxyde Compensation charge Composé binaire Dépendance température Effet photoélectrique Etude expérimentale Fluctuation Photoconductivité Recombinaison Recuit Bi O Bi2O3 Composé minéral
Keyword (en)
Potential barrier Bismuth oxides Charge compensation Binary compounds Temperature dependence Photoelectric effect Experimental study Fluctuations Photoconductivity Recombination Annealing Inorganic compounds
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70B Electronic transport in condensed matter / 001B70B40 Photoconduction and photovoltaic effects; photodielectric effects

Pacs
7240 Photoconduction and photovoltaic effects

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
3903969

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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