Synchroton radiation study of Rb/p-GaSb(110) interface formation and band bending at low temperature
- Author
- BONNET, J. J1 ; SOONCKINDT, L1 ; SHIRM, K. M2 3 ; NISHIGAKI, S2 3 ; HRICOVINI, K; BONNET, J. E; SOUKIASSIAN, P2 3
[1] Univ. Montpellier II, lab. études surfaces interfaces composants, 34095 Montpellier, France
[2] CEA, cent. études Saclay, serv. rech. surfaces irradiation matière, 91191 Gif sur Yvette, France
[3] Univ. Paris-Sud, dép. physique, 91405 Orsay, France - Source
Applied surface science. 1993, Vol 68, Num 3, pp 427-432 ; ref : 27 ref
- Publisher
- Elsevier Science, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Keyword (fr)
- Ancrage Composé binaire Couche mince Couche monomoléculaire Dépôt Etude expérimentale Gallium antimoniure Niveau Fermi Rayon X Rayonnement synchrotron Rubidium Semiconducteur III-V Semiconducteur type P Spectrométrie photoélectron Support Ga Sb GaSb Rb Composé minéral
- Keyword (en)
- Pinning Binary compounds Thin films Monolayers Deposition Experimental study Gallium antimonides Fermi level X radiation Synchrotron radiation Rubidium III-V semiconductors P-type conductors Photoelectron spectroscopy Supports Inorganic compounds
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3905166
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0169-4332(93)90264-C 
https://dx.doi.org/10.1016/0169-4332(93)90264-C
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