Effect of hydrogen on surface roughening during Si homoepitaxial growth
- Author
- ADAMS, D. P1 ; YALISOVE, S. M1 ; EAGLESHAM, D. J
[1] Univ. Michigan, dep. materials sci. eng., Ann Arbor MI 48109-2136, United States - Source
Applied physics letters. 1993, Vol 63, Num 26, pp 3571-3573 ; ref : 19 ref
- CODEN
- APPLAB
- ISSN
- 0003-6951
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics
- Publisher
- American Institute of Physics, Melville, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Amorphisation Croissance cristalline Deutérium Epitaxie jet moléculaire Etude expérimentale Homojonction MET Matériau semiconducteur Pression partielle Rugosité Silicium Surface Si Non métal
- Keyword (en)
- Amorphization Crystal growth Deuterium Molecular beam epitaxy Experimental study Homojunctions TEM Semiconductor materials Partial pressure Roughness Silicon Surfaces Nonmetals
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H35 Solid surfaces and solid-solid interfaces / 001B60H35B Surface structure and topography
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy
- Discipline
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3905571
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.110100 
https://dx.doi.org/10.1063/1.110100
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