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Oscillations of the photoconductivity and characteristic features of the relaxation kinetics of a-Si:H

Author
BUDAGYAN, B. G; AIVAZOV, A. A; STANOVOV, O. N; TYBULEWICZ, A (Translator)
Inst. electronic technology, 103498 Moscow, Russian Federation
Source

Semiconductors (Woodbury, N.Y.). 1993, Vol 27, Num 9, pp 822-825 ; ref : 20 ref

CODEN
SMICES
ISSN
1063-7826
Scientific domain
Electronics; Condensed state physics
Publisher
American Institute of Physics, Melville, NY
Publication country
United States
Document type
Article
Language
Russian
Keyword (fr)
Addition hydrogène Diffusion(transport) Etat amorphe Etude expérimentale Oscillation Photoconductivité Silicium a-Si:H
Keyword (en)
Hydrogen additions Diffusion Amorphous state Experimental study Oscillations Photoconductivity Silicon
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60F Transport properties of condensed matter (nonelectronic) / 001B60F30 Diffusion in solids / 001B60F30N Chemical interdiffusion; diffusion barriers

Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70B Electronic transport in condensed matter / 001B70B40 Photoconduction and photovoltaic effects; photodielectric effects

Pacs
6630N Chemical interdiffusion; diffusion barriers

Pacs
7240 Photoconduction and photovoltaic effects

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
3907195

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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