Studies on excimer laser doping of GaAs using sulphur adsorbate as dopant source
- Author
- ZHANG, S. K1 ; SUGIOKA, K1 ; FAN, J1 ; TOYODA, K1 ; ZOU, S. C
[1] Inst. physical chemical res. (RIKEN), laser sci. res. group, Wako, Saitama 351-01, Japan - Source
Applied physics. A, Solids and surfaces. 1994, Vol 58, Num 2, pp 191-195 ; ref : 17 ref
- CODEN
- APSFDB
- ISSN
- 0721-7250
- Scientific domain
- Electronics; Condensed state physics
- Publisher
- Springer, Berlin
/
Springer, Heidelberg
/
Springer, New York, NY
- Publication country
- Germany
- Document type
- Article
- Language
- English
- Keyword (fr)
- Addition soufre Adsorption Atmosphère contrôlée Composé binaire Conductivité électrique Densité porteur charge Dopage cristal Effet Hall Effet concentration Effet physique rayonnement Effet pression Etude expérimentale Gallium arséniure Laser excimère Matériau semiconducteur Profil profondeur Rayonnement laser SIMS As Ga GaAs:S Résistance couche Composé minéral
- Keyword (en)
- Sulfur additions Adsorption Controlled atmospheres Binary compounds Electric conductivity Carrier density Crystal doping Hall effect Quantity ratio Physical radiation effects Pressure effects Experimental study Gallium arsenides Excimer lasers Semiconductor materials Depth profiles Laser radiation SIMS Sheet resistance Inorganic compounds
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A72 Defects and impurities in crystals; microstructure / 001B60A72V Doping and impurity implantation in iii-v and ii-vi semiconductors
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70B Electronic transport in condensed matter / 001B70B80 Conductivity of specific materials / 001B70B80E Iii-v and ii-vi semiconductors
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3914748
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1007/BF00332178 
https://dx.doi.org/10.1007/BF00332178
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:18:\"10.1007\/BF00332178\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:80:\"Studies on excimer laser doping of GaAs using sulphur adsorbate as dopant source\";s:9:\"\u0000*\u0000jtitle\";s:39:\"Applied physics. A, Solids and surfaces\";s:9:\"\u0000*\u0000stitle\";s:26:\"Appl. phys., A Solids surf\";s:7:\"\u0000*\u0000date\";s:4:\"1994\";s:9:\"\u0000*\u0000volume\";s:2:\"58\";s:8:\"\u0000*\u0000issue\";s:1:\"2\";s:8:\"\u0000*\u0000spage\";s:3:\"191\";s:8:\"\u0000*\u0000epage\";s:3:\"195\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0721-7250\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"ZHANG\";s:10:\"\u0000*\u0000aufirst\";s:4:\"S. K\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:4:{i:0;s:10:\"SUGIOKA, K\";i:1;s:6:\"FAN, J\";i:2;s:9:\"TOYODA, K\";i:3;s:9:\"ZOU, S. C\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"APSFDB\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:80:\"Studies on excimer laser doping of GaAs using sulphur adsorbate as dopant source\";s:8:\"\u0000*\u0000place\";s:6:\"Berlin\";s:6:\"\u0000*\u0000pub\";s:8:\"Springer\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:18:\"10.1007\/BF00332178\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:80:\"Studies on excimer laser doping of GaAs using sulphur adsorbate as dopant source\";s:9:\"\u0000*\u0000jtitle\";s:39:\"Applied physics. A, Solids and surfaces\";s:9:\"\u0000*\u0000stitle\";s:26:\"Appl. phys., A Solids surf\";s:7:\"\u0000*\u0000date\";s:4:\"1994\";s:9:\"\u0000*\u0000volume\";s:2:\"58\";s:8:\"\u0000*\u0000issue\";s:1:\"2\";s:8:\"\u0000*\u0000spage\";s:3:\"191\";s:8:\"\u0000*\u0000epage\";s:3:\"195\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0721-7250\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"ZHANG\";s:10:\"\u0000*\u0000aufirst\";s:4:\"S. K\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:4:{i:0;s:10:\"SUGIOKA, K\";i:1;s:6:\"FAN, J\";i:2;s:9:\"TOYODA, K\";i:3;s:9:\"ZOU, S. C\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"APSFDB\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:80:\"Studies on excimer laser doping of GaAs using sulphur adsorbate as dopant source\";s:8:\"\u0000*\u0000place\";s:6:\"Berlin\";s:6:\"\u0000*\u0000pub\";s:8:\"Springer\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:18:\"10.1007\/BF00332178\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:18:\"10.1007\/BF00332178\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:80:\"Studies on excimer laser doping of GaAs using sulphur adsorbate as dopant source\";s:9:\"\u0000*\u0000jtitle\";s:39:\"Applied physics. A, Solids and surfaces\";s:9:\"\u0000*\u0000stitle\";s:26:\"Appl. phys., A Solids surf\";s:7:\"\u0000*\u0000date\";s:4:\"1994\";s:9:\"\u0000*\u0000volume\";s:2:\"58\";s:8:\"\u0000*\u0000issue\";s:1:\"2\";s:8:\"\u0000*\u0000spage\";s:3:\"191\";s:8:\"\u0000*\u0000epage\";s:3:\"195\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0721-7250\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"ZHANG\";s:10:\"\u0000*\u0000aufirst\";s:4:\"S. K\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:4:{i:0;s:10:\"SUGIOKA, K\";i:1;s:6:\"FAN, J\";i:2;s:9:\"TOYODA, K\";i:3;s:9:\"ZOU, S. C\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"APSFDB\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:80:\"Studies on excimer laser doping of GaAs using sulphur adsorbate as dopant source\";s:8:\"\u0000*\u0000place\";s:6:\"Berlin\";s:6:\"\u0000*\u0000pub\";s:8:\"Springer\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:18:\"10.1007\/BF00332178\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:80:\"Studies on excimer laser doping of GaAs using sulphur adsorbate as dopant source\";s:9:\"\u0000*\u0000jtitle\";s:39:\"Applied physics. A, Solids and surfaces\";s:9:\"\u0000*\u0000stitle\";s:26:\"Appl. phys., A Solids surf\";s:7:\"\u0000*\u0000date\";s:4:\"1994\";s:9:\"\u0000*\u0000volume\";s:2:\"58\";s:8:\"\u0000*\u0000issue\";s:1:\"2\";s:8:\"\u0000*\u0000spage\";s:3:\"191\";s:8:\"\u0000*\u0000epage\";s:3:\"195\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0721-7250\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"ZHANG\";s:10:\"\u0000*\u0000aufirst\";s:4:\"S. K\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:4:{i:0;s:10:\"SUGIOKA, K\";i:1;s:6:\"FAN, J\";i:2;s:9:\"TOYODA, K\";i:3;s:9:\"ZOU, S. C\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"APSFDB\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:80:\"Studies on excimer laser doping of GaAs using sulphur adsorbate as dopant source\";s:8:\"\u0000*\u0000place\";s:6:\"Berlin\";s:6:\"\u0000*\u0000pub\";s:8:\"Springer\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:18:\"10.1007\/BF00332178\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:80:\"Studies on excimer laser doping of GaAs using sulphur adsorbate as dopant source\";s:9:\"\u0000*\u0000jtitle\";s:39:\"Applied physics. A, Solids and surfaces\";s:9:\"\u0000*\u0000stitle\";s:26:\"Appl. phys., A Solids surf\";s:7:\"\u0000*\u0000date\";s:4:\"1994\";s:9:\"\u0000*\u0000volume\";s:2:\"58\";s:8:\"\u0000*\u0000issue\";s:1:\"2\";s:8:\"\u0000*\u0000spage\";s:3:\"191\";s:8:\"\u0000*\u0000epage\";s:3:\"195\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0721-7250\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"ZHANG\";s:10:\"\u0000*\u0000aufirst\";s:4:\"S. K\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:4:{i:0;s:10:\"SUGIOKA, K\";i:1;s:6:\"FAN, J\";i:2;s:9:\"TOYODA, K\";i:3;s:9:\"ZOU, S. C\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"APSFDB\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:80:\"Studies on excimer laser doping of GaAs using sulphur adsorbate as dopant source\";s:8:\"\u0000*\u0000place\";s:6:\"Berlin\";s:6:\"\u0000*\u0000pub\";s:8:\"Springer\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:0:\"\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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