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Symmetry-dependent electronic Raman scattering in La2-xSrxCuO4 : evidence for doping-induced change in the k-space anisotropy of charge dynamics

Author
KATSUFUJI, T1 ; TOKURA, Y1 ; IDO, T; UCHIDA, S
[1] Univ. Tokyo, dep. physics, Tokyo 113, Japan
Source

Physical review. B, Condensed matter. 1993, Vol 48, Num 21, pp 16131-16134 ; ref : 18 ref

CODEN
PRBMDO
ISSN
0163-1829
Scientific domain
Crystallography; Metallurgy, welding; Condensed state physics
Publisher
American Institute of Physics, Woodbury, NY / American Physical Society, Woodbury, NY
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Composé quaternaire Cuivre oxyde Effet concentration Etude expérimentale Lanthane oxyde Masse effective Spectre Raman Strontium oxyde Supraconducteur haute température Surface Fermi Cu La O Sr La2-xSrxCuO4 Composé minéral Métal transition composé
Keyword (en)
Quaternary compounds Copper oxides Quantity ratio Experimental study Lanthanum oxides Effective mass Raman spectra Strontium oxides High-Tc superconductors Fermi surface Inorganic compounds Transition element compounds
Keyword (es)
Superficie Fermi
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70D Superconductivity / 001B70D25 Properties of type I and type II superconductors / 001B70D25J Electronic structure

Pacs
7425J Electronic structure

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
3916229

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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