Orientation and pressure dependence of the band overlap in InAs/GaSb structures
- Author
- SYMONS, D. M; LAKRIMI, M; WARBURTON, R. J; NICHOLAS, R. J; MASON, N. J; WALKER, P. J; EREMETS, M. I
Univ. Oxford, Clarendon lab., physics dep., Oxford OX1 3PU, United Kingdom - Source
Semiconductor science and technology. 1994, Vol 9, Num 1, pp 118-122 ; ref : 21 ref
- CODEN
- SSTEET
- ISSN
- 0268-1242
- Scientific domain
- Electronics; Optics; Condensed state physics
- Publisher
- Institute of Physics, Bristol
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Chevauchement Composé binaire Densité trou Densité électron Effet Hall Effet pression Etude expérimentale Gallium antimoniure Hétérostructure Indium arséniure Magnétorésistance Matériau semiconducteur Structure bande As In Ga Sb GaSb InAs Composé minéral
- Keyword (en)
- Overlap Binary compounds Hole density Electron density Hall effect Pressure effects Experimental study Gallium antimonides Heterostructures Indium arsenides Magnetoresistance Semiconductor materials Band structure Inorganic compounds
- Keyword (es)
- Imbricación Densidad huecos
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C21 Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems
- Pacs
- 7321 Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3917891
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1088/0268-1242/9/1/021 
https://dx.doi.org/10.1088/0268-1242/9/1/021
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