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Orientation and pressure dependence of the band overlap in InAs/GaSb structures

Author
SYMONS, D. M; LAKRIMI, M; WARBURTON, R. J; NICHOLAS, R. J; MASON, N. J; WALKER, P. J; EREMETS, M. I
Univ. Oxford, Clarendon lab., physics dep., Oxford OX1 3PU, United Kingdom
Source

Semiconductor science and technology. 1994, Vol 9, Num 1, pp 118-122 ; ref : 21 ref

CODEN
SSTEET
ISSN
0268-1242
Scientific domain
Electronics; Optics; Condensed state physics
Publisher
Institute of Physics, Bristol
Publication country
United Kingdom
Document type
Article
Language
English
Keyword (fr)
Chevauchement Composé binaire Densité trou Densité électron Effet Hall Effet pression Etude expérimentale Gallium antimoniure Hétérostructure Indium arséniure Magnétorésistance Matériau semiconducteur Structure bande As In Ga Sb GaSb InAs Composé minéral
Keyword (en)
Overlap Binary compounds Hole density Electron density Hall effect Pressure effects Experimental study Gallium antimonides Heterostructures Indium arsenides Magnetoresistance Semiconductor materials Band structure Inorganic compounds
Keyword (es)
Imbricación Densidad huecos
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C21 Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems

Pacs
7321 Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
3917891

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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