Study of Schottky contacts on n-Ga0.51In0.49P by low-pressure metal-organic chemical-vapor deposition
- Author
- CHANG, E. Y1 ; YEONG-LIN LAI; KUN-CHUAN LIN; CHUN-YEN CHANG
[1] National Chiao Tung univ., inst. materials sci. eng., Hsinchu, Taiwan, Province of China - Source
Journal of applied physics. 1993, Vol 74, Num 9, pp 5622-5625 ; ref : 15 ref
- CODEN
- JAPIAU
- ISSN
- 0021-8979
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics; Physics
- Publisher
- American Institute of Physics, Woodbury, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Barrière Schottky CVD Caractéristique courant tension Composé ternaire Courant fuite Etude expérimentale Gallium phosphure Hauteur barrière Indium phosphure Matériau semiconducteur Nitrure Recuit Siliciure Ga In P Ga0,51In0,49P Composé minéral Métal transition
- Keyword (en)
- Schottky barrier CVD IV characteristic Ternary compounds Leakage current Experimental study Gallium phosphides Barrier height Indium phosphides Semiconductor materials Nitrides Annealing Silicides Inorganic compounds Transition elements
- Keyword (es)
- Barrera Schottky
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C30 Surface double layers, schottky barriers, and work functions
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3926798
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.354223 
https://dx.doi.org/10.1063/1.354223
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