Studies on the prospects of GaInAs and GaInAsP for double-drift region heterostructure IMPATTs
- Author
- DASH, G. N; PATI, S. P
Sambalpur univ., dep. physics, Sambalpur 768019, India - Source
Applied physics. A, Solids and surfaces. 1994, Vol 58, Num 2, pp 211-217 ; ref : 17 ref
- CODEN
- APSFDB
- ISSN
- 0721-7250
- Scientific domain
- Electronics; Condensed state physics
- Publisher
- Springer, Berlin
/
Springer, Heidelberg
/
Springer, New York, NY
- Publication country
- Germany
- Document type
- Article
- Language
- English
- Keyword (fr)
- Choix matériau Composé binaire Composé ternaire Diode IMPATT Dispositif effet tunnel Double diffusion Etude théorique Gallium Arséniure Hétérojonction Indium Arséniure Indium Phosphure Propriété électrique Propriété électronique Simulation ordinateur As Ga In As Ga Composé quaternaire Ga In As P GaAs GaInAs GaInAsP In P InP Région de dérive double
- Keyword (en)
- Material selection Binary compound Ternary compound IMPATT diode Tunneling device Double diffusion Theoretical study Gallium Arsenides Heterojunction Indium Arsenides Indium Phosphides Electrical properties Electronic properties Computer simulation Quaternary compound
- Keyword (es)
- Selección material Compuesto binario Compuesto ternario Diodo IMPATT Dispositivo efecto túnel Doble difusión Estudio teórico Galio Arseniuro Heterounión Indio Arseniuro Indio Fosfuro Propiedad eléctrica Propiedad electrónica Simulación computadora
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F03 Diodes
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3928232
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1007/BF00332181 
https://dx.doi.org/10.1007/BF00332181
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