Suppression of interfacial boron accumulation and defect density in molecular beam epitaxial silicon
- Author
- DAWEI GONG1 ; XIN WEI1 ; FANG LU; QINHUA WANG; HENGHUI SUN; XUN WANG1
[1] Fudan univ., surface physics lab., Shanghai 200433, China - Source
Solid state communications. 1993, Vol 88, Num 9, pp 731-734 ; ref : 6 ref
- CODEN
- SSCOA4
- ISSN
- 0038-1098
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier, Oxford
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Défaut Epitaxie jet moléculaire Interface Préparation échantillon RHEED Silicium Surface Traitement surface
- Keyword (en)
- Defects Molecular beam epitaxy Interfaces Sample preparation RHEED Silicon Surfaces Surface treatments
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3930214
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0038-1098(93)90634-Y 
https://dx.doi.org/10.1016/0038-1098(93)90634-Y
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