Surface recombination velocity in p-type GaAs
- Author
- ITO, H; ISHIBASHI, T
NTT LSI Laboratories, Atsugi-shi, Kanagawa 243-01, Japan - Source
Japanese journal of applied physics. 1994, Vol 33, Num 1A, pp 88-89 ; 1 ; ref : 16 ref
- CODEN
- JJAPA5
- ISSN
- 0021-4922
- Scientific domain
- Crystallography; Optics; Condensed state physics; Physics; Plasma physics
- Publisher
- Japanese journal of applied physics, Tokyo
- Publication country
- Japan
- Document type
- Article
- Language
- English
- Keyword (fr)
- Densité porteur charge Durée vie moyenne Etude expérimentale Gallium arséniure Photoluminescence Porteur minoritaire Recombinaison superficielle Semiconducteur type P As Ga GaAs Composé minéral
- Keyword (en)
- Carrier density Lifetime Experimental study Gallium arsenides Photoluminescence Minority carriers Surface recombination P-type conductors Inorganic compounds
- Keyword (es)
- Recombinación superficial
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70B Electronic transport in condensed matter / 001B70B20 Conductivity phenomena in semiconductors and insulators / 001B70B20J Charge carriers: generation, recombination, lifetime, and trapping
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H55 Photoluminescence / 001B70H55C Iii-v semiconductors
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3936405
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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