Latent damage and parametric drift in electrostatically damaged MOS transistors
- Author
- TUNNICLIFFE, M. J; DWYER, V. M; CAMPBELL, D. S
Univ. technology, international electronics reliability inst., dep. electronic electrical eng., Loughborough Leics. LE11 3TU, United Kingdom - Conference title
- Electrical/electrostatic discharge symposium
- Conference name
- Electrical/electrostatic discharge symposium (14 ; Dallas TX 1992-09-16)
- Author (monograph)
- GREASON; WILLIAM, D (Editor)
EOS/ESD Association, Rome NY, United States (Funder/Sponsor)
IEEE (Funder/Sponsor)
Univ. Western Ontario, dep. electrical eng., London ON, Canada - Source
Journal of electrostatics. 1993, Vol 31, Num 2-3, pp 91-110 ; ref : 13 ref
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Caractéristique fonctionnement Circuit intégré Circuit logique Dispositif semiconducteur Décharge électrique Dégradation Fiabilité Interconnexion Schéma équivalent Technologie MOS complémentaire Transistor MOS Transistor effet champ
- Keyword (en)
- Performance characteristic Integrated circuit Logic circuit Semiconductor device Electric discharge Degradation Reliability Interconnection Equivalent circuit Complementary MOS technology MOS transistor Field effect transistor
- Keyword (es)
- Característica funcionamiento Circuito integrado Circuito lógico Dispositivo semiconductor Descarga eléctrica Degradación Fiabilidad Interconección Esquema equivalente Tecnología MOS complementario Transistor MOS Transistor efecto campo
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3942361
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0304-3886(93)90003-P 
https://dx.doi.org/10.1016/0304-3886(93)90003-P
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