Stress measurements in silicon substrates with TiSi2 patterns using Raman microprobe
- Author
- ITO, T; AZUMA, H; NODA, S
TOYOTA Central Research & Development Laboratories, Inc., Aichi-gun, Aichi 480-11, Japan - Source
Japanese journal of applied physics. 1994, Vol 33, Num 1A, pp 171-177 ; 1 ; ref : 14 ref
- CODEN
- JJAPA5
- ISSN
- 0021-4922
- Scientific domain
- Crystallography; Optics; Condensed state physics; Physics; Plasma physics
- Publisher
- Japanese journal of applied physics, Tokyo
- Publication country
- Japan
- Document type
- Article
- Language
- English
- Keyword (fr)
- Contrainte traction Contrainte Etude expérimentale Interface solide solide Silicium Titane siliciure Si Ti Si TiSi2 Composé minéral Métal transition composé
- Keyword (en)
- Tensile stress Stresses Experimental study Solid-solid interfaces Silicon Titanium silicides Inorganic compounds Transition element compounds
- Keyword (es)
- Tensión traccíon
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H35 Solid surfaces and solid-solid interfaces / 001B60H35G Mechanical and acoustical properties; adhesion
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3945436
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1143/JJAP.33.171 
https://dx.doi.org/10.1143/JJAP.33.171
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