Optical properties of MBE-grown ZnTe on GaAs : effects of a ZnSe buffer layer
- Author
- IIDA, F; TAKOJIMA, N; IMAI, K; KUMAZAKI, K
Hokkaido inst. technology, dep. applied electronics, Sapporo 006, Japan - Source
Physica status solidi. A. Applied research. 1993, Vol 139, Num 2, pp 531-539 ; ref : 18 ref
- CODEN
- PSSABA
- ISSN
- 0031-8965
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Wiley-VCH, Berlin
- Publication country
- Germany
- Document type
- Article
- Language
- English
- Keyword (fr)
- Couche tampon Dépendance température Effet dimensionnel Etude expérimentale Largeur raie Matériau semiconducteur Photoluminescence Spectre Raman Zinc tellurure Te Zn ZnTe Composé minéral
- Keyword (en)
- Buffer layer Temperature dependence Size effect Experimental study Line widths Semiconductor materials Photoluminescence Raman spectra Zinc tellurides Inorganic compounds
- Keyword (es)
- Capa tampón
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H30 Infrared and raman spectra and scattering / 001B70H30F Iii-v and ii-vi semiconductors
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H55 Photoluminescence / 001B70H55E Ii-vi semiconductors
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3946921
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1002/pssa.2211390226 
https://dx.doi.org/10.1002/pssa.2211390226
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