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Optical properties of MBE-grown ZnTe on GaAs : effects of a ZnSe buffer layer

Author
IIDA, F; TAKOJIMA, N; IMAI, K; KUMAZAKI, K
Hokkaido inst. technology, dep. applied electronics, Sapporo 006, Japan
Source

Physica status solidi. A. Applied research. 1993, Vol 139, Num 2, pp 531-539 ; ref : 18 ref

CODEN
PSSABA
ISSN
0031-8965
Scientific domain
Crystallography; Electronics; Metallurgy, welding; Condensed state physics
Publisher
Wiley-VCH, Berlin
Publication country
Germany
Document type
Article
Language
English
Keyword (fr)
Couche tampon Dépendance température Effet dimensionnel Etude expérimentale Largeur raie Matériau semiconducteur Photoluminescence Spectre Raman Zinc tellurure Te Zn ZnTe Composé minéral
Keyword (en)
Buffer layer Temperature dependence Size effect Experimental study Line widths Semiconductor materials Photoluminescence Raman spectra Zinc tellurides Inorganic compounds
Keyword (es)
Capa tampón
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H30 Infrared and raman spectra and scattering / 001B70H30F Iii-v and ii-vi semiconductors

Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H55 Photoluminescence / 001B70H55E Ii-vi semiconductors

Pacs
7830F III-V and II-VI semiconductors

Pacs
7855E II-VI semiconductors

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
3946921

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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