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Evaluation of amorphous (Mo, Ta, W)-Si-N diffusion barriers for <Si>|Cu metallizations

Author
REID, J. S1 ; KOLAWA, E1 ; RUIZ, R. P; NICOLET, M.-A1
[1] California inst. technology, Pasadena CA 91125, United States
Conference title
International conference on metallurgical coatings and thin films
Conference name
International conference on metallurgical coatings and thin films (20 ; San Diego CA 1993-04-19)
Author (monograph)
MCGUIRE, GARY E (Editor)1 ; MATTHEWS, ALLAN (Editor); JEHN, HERMANN A (Editor)
[1] MCNC, cent. microelectrics systems technologies, Research Triangle Park NC 27709-2889, United States
Source

Thin solid films. 1993, Vol 236, Num 1-2, pp 319-324 ; ref : 19 ref

CODEN
THSFAP
ISSN
0040-6090
Scientific domain
Crystallography; Electronics; Metallurgy, welding; Condensed state physics
Publisher
Elsevier Science, Lausanne
Publication country
Switzerland
Document type
Conference Paper
Language
English
Keyword (fr)
Alliage amorphe Azote Barrière diffusion Caractéristique courant tension Cristallisation Cuivre Diffusion joint grain Etude expérimentale Fabrication microélectronique Modèle thermodynamique Molybdène alliage Métallisation Pulvérisation cathodique Recuit Silicium alliage Silicium Tantale alliage Tungstène alliage
Keyword (en)
Amorphous alloy Nitrogen Diffusion barriers Voltage current curve Crystallization Copper Grain boundary diffusion Experimental study Microelectronic fabrication Thermodynamic model Molybdenum alloy Metallizing Cathodic sputtering Annealing Silicon alloy Silicon Tantalum alloy Tungsten alloy
Keyword (es)
Aleación amorfa Nitrógeno Característica corriente tensión Cristalización Cobre Difusión límite grano Estudio experimental Fabricación microeléctrica Modelo termodinámico Molibdeno aleación Metalización Pulverización catódica Recocido Silicio aleación Silicio Tantalio aleación Wolframio aleación
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
3952542

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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