Advanced multilayer metallization schemes with copper as interconnection metal
- Author
- MURARKA, S. P1 ; GUTMANN, R. J1 ; KALOYEROS, A. E; LANFORD, W. A
[1] Rensselaer polytech. inst., Troy NY 12180, United States - Conference title
- International conference on metallurgical coatings and thin films
- Conference name
- International conference on metallurgical coatings and thin films (20 ; San Diego CA 1993-04-19)
- Author (monograph)
- MCGUIRE, GARY E (Editor)1 ; MATTHEWS, ALLAN (Editor); JEHN, HERMANN A (Editor)
[1] MCNC, cent. microelectrics systems technologies, Research Triangle Park NC 27709-2889, United States - Source
Thin solid films. 1993, Vol 236, Num 1-2, pp 257-266 ; ref : 46 ref
- CODEN
- THSFAP
- ISSN
- 0040-6090
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier Science, Lausanne
- Publication country
- Switzerland
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Article synthèse Circuit intégré Cuivre Diffusion Dispositif semiconducteur Diélectrique Fabrication microélectronique Microélectronique Métallisation Revêtement Siliciure Structure MOS
- Keyword (en)
- Review Integrated circuit Copper Diffusion Semiconductor device Dielectric materials Microelectronic fabrication Microelectronics Metallizing Coatings Silicides MOS structure
- Keyword (es)
- Artículo síntesis Circuito integrado Cobre Difusión Dispositivo semiconductor Dieléctrico Fabricación microeléctrica Microelectrónica Metalización Revestimiento Siliciuro Estructura MOS
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3952627
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0040-6090(93)90680-N 
https://dx.doi.org/10.1016/0040-6090(93)90680-N
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