Particle contamination in low pressure organometallic chemical vapor deposition reactors : methods of particle detection and causes of particle formation using a liquid alane (AlH3) precursor
- Author
- SIMMONDS, M. G1 ; GLADFELTER, W. L1 ; HAOJIANG LI; MCMURRY, P. H
[1] Univ. Minnesota, dep. chemistry, Minneapolis MN 55455, United States - Source
Journal of vacuum science and technology. A. Vacuum, surfaces, and films. 1993, Vol 11, Num 6, pp 3026-3033 ; ref : 50 ref
- CODEN
- JVTAD6
- ISSN
- 0734-2101
- Scientific domain
- Metallurgy, welding; Physics
- Publisher
- American Institute of Physics, Melville, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Aluminium Basse pression CVD Contamination Couche mince Croissance cristalline Etude expérimentale Métal Particule Al Composé organométallique
- Keyword (en)
- Aluminium Low pressure CVD Contamination Thin films Crystal growth Experimental study Metals Particles Organometallic compounds
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15G Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
- Discipline
- Metals. Metallurgy Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3959832
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1116/1.578292 
https://dx.doi.org/10.1116/1.578292
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