Study of current-voltage characteristic in a ZnSe-based II-VI laser diode
- Author
- SUEMUNE, I
Hiroshima univ., fac. eng., 1-4-1 Kagamiyama, Higashihiroshima 724, Japan - Source
Applied physics letters. 1993, Vol 63, Num 19, pp 2612-2614 ; ref : 3 ref
- CODEN
- APPLAB
- ISSN
- 0003-6951
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics
- Publisher
- American Institute of Physics, Melville, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Barrière potentiel Caractéristique courant tension Contact métal semiconducteur Dispositif optoélectronique Effet tunnel Laser injection Laser semiconducteur Structure bande Zinc Séléniure
- Keyword (en)
- Potential barrier IV characteristic Metal-semiconductor contacts Optoelectronic devices Tunnel effect Injection laser Semiconductor lasers Band structure Zinc Selenides
- Keyword (es)
- Laser inyección
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B40 Fundamental areas of phenomenology (including applications) / 001B40B Optics / 001B40B55 Lasers / 001B40B55P Semiconductor lasers; laser diodes
- Discipline
- Physics : optics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3962201
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.110447 
https://dx.doi.org/10.1063/1.110447
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