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Modulated molecular beam mass spectrometry studies of the growth of GaAs and InxGa1-xAs using tri-isobutylgallium

Author
LEVOGUER, C. L1 ; FOORD, J. S1 ; DAVIES, G. J; SKEVINGTON, P. J
[1] Univ. Oxford, physical chemistry lab., Oxford OX1 3QZ, United Kingdom
Conference title
Chemical beam epitaxy and related growth techniques. International conference
Conference name
Chemical beam epitaxy and related growth techniques. International conference (4 ; Nara 1993-07-21)
Author (monograph)
SHIRAKI, Y (Editor)1 ; KONAGAI, m (Editor); HIYAMIZU, S (Editor)
[1] Univ. Tokyo, Japan
Source

Journal of crystal growth. 1994, Vol 136, Num 1-4, pp 109-113 ; ref : 15 ref

CODEN
JCRGAE
ISSN
0022-0248
Scientific domain
Crystallography; Geology; Metallurgy, welding
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Conference Paper
Language
English
Keyword (fr)
Composé binaire Composé ternaire Condensation faisceau chimique Croissance cristalline Domaine température 400-1000 K Dépendance température Epitaxie Etude expérimentale Gallium arséniure Indium arséniure Matériau semiconducteur Précurseur Spectrométrie masse As Ga In As Ga GaAs InxGa1-xAs Composé minéral
Keyword (en)
Binary compounds Ternary compounds Chemical beam condensation Crystal growth Temperature range 400-1000 K Temperature dependence Epitaxy Experimental study Gallium arsenides Indium arsenides Semiconductor materials Precursor Mass spectroscopy Inorganic compounds
Keyword (es)
Condensación haz químico
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy

Discipline
Physics and materials science
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
3965902

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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