Modulated molecular beam mass spectrometry studies of the growth of GaAs and InxGa1-xAs using tri-isobutylgallium
- Author
- LEVOGUER, C. L1 ; FOORD, J. S1 ; DAVIES, G. J; SKEVINGTON, P. J
[1] Univ. Oxford, physical chemistry lab., Oxford OX1 3QZ, United Kingdom - Conference title
- Chemical beam epitaxy and related growth techniques. International conference
- Conference name
- Chemical beam epitaxy and related growth techniques. International conference (4 ; Nara 1993-07-21)
- Author (monograph)
- SHIRAKI, Y (Editor)1 ; KONAGAI, m (Editor); HIYAMIZU, S (Editor)
[1] Univ. Tokyo, Japan - Source
Journal of crystal growth. 1994, Vol 136, Num 1-4, pp 109-113 ; ref : 15 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Composé binaire Composé ternaire Condensation faisceau chimique Croissance cristalline Domaine température 400-1000 K Dépendance température Epitaxie Etude expérimentale Gallium arséniure Indium arséniure Matériau semiconducteur Précurseur Spectrométrie masse As Ga In As Ga GaAs InxGa1-xAs Composé minéral
- Keyword (en)
- Binary compounds Ternary compounds Chemical beam condensation Crystal growth Temperature range 400-1000 K Temperature dependence Epitaxy Experimental study Gallium arsenides Indium arsenides Semiconductor materials Precursor Mass spectroscopy Inorganic compounds
- Keyword (es)
- Condensación haz químico
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3965902
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0022-0248(94)90392-1 
https://dx.doi.org/10.1016/0022-0248(94)90392-1
