Effect of spin injection on the conduction-electron spin resonance at a ferromagnet-semiconductor contact
- Autor
- MARGULIS, A. D; MARGULIS, V. A
N. P. Ogarev Mordovian state univ., dep. physics, Saransk 430000, Russian Federation - Fuente
Physica. B, Condensed matter. 1994, Vol 193, Num 2, pp 179-187 ; ref : 18 ref
- ISSN
- 0921-4526
- Campo Científico
- Crystallography; Condensed state physics
- Editor
- Elsevier, Amsterdam
- País de la publicación
- Netherlands
- Tipo de documento
- Article
- Idioma
- Russian
- Palabra clave (fr)
- Densité spin Dipôle électrique Electron conduction Etude théorique Hamiltonien effectif Interface solide solide Matrice densité Matériau ferromagnétique Matériau semiconducteur Polarisation spin RPE
- Palabra clave (in)
- Spin density Electric dipoles Conduction electron Theoretical study Effective Hamiltonian Solid-solid interfaces Density matrix Ferromagnetic materials Semiconductor materials Spin polarization ESR
- Palabra clave (es)
- Electrón conducción Hamiltoniano efectivo Polarización spin
- Clasificación
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70F Magnetic resonances and relaxations in condensed matter, mössbauer effect / 001B70F30 Electron paramagnetic resonance and relaxation / 001B70F30P Conduction electrons
- Disciplina
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Procedencia
- Inist-CNRS
- Base de datos
- PASCAL
- Identificador INIST
- 3968396
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0921-4526(94)90010-8 
https://dx.doi.org/10.1016/0921-4526(94)90010-8
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