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Studies on the grain boundary effect in polycrystalline CdTe films using optical reflectance measurements

Author
DUTTA, J1 ; PAL, R1 ; BHATTACHARYYA, S. K; CHAUDHURI, S1 ; PAL, A. K1
[1] Indian association cultivation sci., dep. materials sci., Calcutta 700032, India
Source

Materials chemistry and physics. 1993, Vol 36, Num 1-2, pp 177-182 ; ref : 18 ref

CODEN
MCHPDR
ISSN
0254-0584
Scientific domain
Chemistry; Metallurgy, welding; Physics
Publisher
Elsevier, Lausanne
Publication country
Switzerland
Document type
Article
Language
English
Keyword (fr)
Cadmium tellurure Concentration porteur charge Couche mince Diffraction RX Dispositif photovoltaïque Effet photovoltaïque Etude expérimentale Facteur thermique Grosseur grain Indice réfraction Joint grain Polycristal Propriété optique Propriété électronique Réflexion optique
Keyword (en)
Cadmium tellurides Charge carrier concentration Thin films X-ray diffraction Photovoltaic cell Photovoltaic effect Experimental study Thermal factor Grain size Refractive index Grain boundaries Polycrystals Optical properties Electronic properties Optical reflection
Keyword (es)
Concentración portador carga Dispositivo fotovoltaico Factor térmico Propiedad electrónica
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H66 Optical properties of specific thin films / 001B70H66B Metals and metallic alloys

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
3988767

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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