Characterization of silicon dioxide and phosphosilicate glass deposited films
- Author
- ROJAS, S1 ; ZANOTTI, L1 ; BORGHESI, A; SASSELLA, A; PIGNATEL, G. U
[1] SGS-Thomson Microelectronics, 20041 Agrate Brianza, Italy - Conference title
- ISEIPB : International symposium on electron, ion, and photon beams
- Conference name
- ISEIPB : International symposium on electron, ion, and photon beams (37 ; San Diego CA 1993-06-01)
- Author (monograph)
- American Vacuum Society, New York NY, United States (Funder/Sponsor)
IEEE. Electron Device Society, United States (Funder/Sponsor)
Optical Society of America, Washington DC, United States (Funder/Sponsor) - Source
Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 6, pp 2081-2089 ; ref : 25 ref
- ISSN
- 1071-1023
- Scientific domain
- Electronics
- Publisher
- American Institute of Physics, Melville, NY
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Addition phosphore Caractérisation Circuit intégré Dépôt chimique phase vapeur Etude expérimentale Fabrication microélectronique Mémoire PROM Phosphosilicate Silane Silicate Verre P
- Keyword (en)
- Phosphorus addition Characterization Integrated circuit Chemical vapor deposition Experimental study Microelectronic fabrication PROM memory Phosphosilicates Silane Silicates Glass
- Keyword (es)
- Adición fósforo Caracterización Circuito integrado Depósito químico fase vapor Estudio experimental Fabricación microeléctrica Memoria PROM Fosfosilicato Silano Silicato Vidrio
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 3993691
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1116/1.586546 
https://dx.doi.org/10.1116/1.586546
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