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Monte Carlo analysis of nonequilibrium electron transport in InAlGaAs/InGaAs HBT's

Author
NAKAJIMA, H; ISHIBASHI, T
NTT LSI Laboratories, Kanagawa 243-01, Japan
Conference title
Annual device research conference
Conference name
Annual device research conference (51 ; Santa Barbara CA 1993-06-21)
Author (monograph)
IEEE Electron Devices Society (Funder/Sponsor)
Source

I.E.E.E. transactions on electron devices. 1993, Vol 40, Num 11, pp 1950-1956 ; ref : 24 ref

CODEN
IETDAI
ISSN
0018-9383
Scientific domain
Electronics
Publisher
Institute of Electrical and Electronics Engineers, New York, NY
Publication country
United States
Document type
Conference Paper
Language
English
Keyword (fr)
Caractéristique fonctionnement Dispositif semiconducteur Electron chaud Méthode Monte Carlo Phénomène transport Structure bande Temps parcours Transistor hétérojonction
Keyword (en)
Performance characteristic Semiconductor device Hot electron Monte Carlo method Transport process Band structure Transit time Heterojunction transistor
Keyword (es)
Característica funcionamiento Dispositivo semiconductor Electrón caliente Método Monte Carlo Fenómeno transporte Estructura banda Tiempo recorrido Transistor heterounión
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
4008529

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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