Suppression of side-etching in C2H6/H2/O2 reactive ion etching for the fabrication of an InGaAsP/InP P-substrate buried-heterostructure laser diode
- Author
- SUGIMOTO, H1 ; ISU, T1 ; TADA, H; MIURA, T; SHIBA, T; KIMURA, T; TAKEMOTO, A
[1] Mitsubishi Electric Corp., cent. res. lab., Amagasaki, Hyogo 661, Japan - Source
Journal of the Electrochemical Society. 1993, Vol 140, Num 12, pp 3615-3620 ; ref : 18 ref
- CODEN
- JESOAN
- ISSN
- 0013-4651
- Scientific domain
- General chemistry, physical chemistry; Crystallography; Electrical engineering; Condensed state physics
- Publisher
- Electrochemical Society, Pennington, NJ
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Addition oxygène Composé III-V Composé binaire Couche enterrée Diode MESA Essai vieillissement Ethane Etude expérimentale Fabrication microélectronique Gallium Arséniure Gravure ionique réactive Guide onde évidement Hydrogène Indium Phosphure Laser semiconducteur Propriété optique As Ga In P Composé quaternaire H2 H In P InGaAsP InP O2 O
- Keyword (en)
- Oxygen addition III-V compound Binary compound Buried layer MESA diode Aging test Ethane Experimental study Microelectronic fabrication Gallium Arsenides Reactive ion etching Ridge waveguide Hydrogen Indium Phosphides Semiconductor laser Optical properties Quaternary compound
- Keyword (es)
- Adición oxígeno Compuesto III-V Compuesto binario Capa enterrada Diodo MESA Ensayo envejecimiento Etano Estudio experimental Fabricación microeléctrica Galio Arseniuro Grabado iónico reactivo Guía onda vaciado Hidrógeno Indio Fosfuro Laser semiconductor Propiedad óptica
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 4013015
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1149/1.2221136 
https://dx.doi.org/10.1149/1.2221136
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