Magnetron reactive ion etching of GaAs in a BCl3 discharge
- Author
- MCLANE, G. F1 ; MEYYAPPAN, M; LEE, H. S; COLE, M. W; ECKART, D. W; LAREAU, R. T; NARAROFF, M; SASSERATH, J
[1] U.S. army res. lab., Fort Montmouth NJ 07703, United States - Conference title
- International vacuum microelectronics conference
- Conference name
- International vacuum microelectronics conference (5 ; Vienna 1992-07-13)
- Author (monograph)
- MITTERAUER
American Vacuum Society, New York NY, United States (Funder/Sponsor)
National Science Foundation, Washington DC, United States (Funder/Sponsor)
Office of Naval Research. European Office, United States (Funder/Sponsor)
US Army Research and Development Standardization Group, Germany (Funder/Sponsor)
Bundesministerium für Wissenschaft und Forschung, Germany (Funder/Sponsor)
Osterreichische Forschungsgemeinschaft, Germany (Funder/Sponsor) - Source
Journal of vacuum science & technology. B. Microelectronics and nanometer structures. Processing, measurement and phenomena. 1993, Vol 11, Num 2, pp 333-336 ; ref : 8 ref
- ISSN
- 1071-1023
- Scientific domain
- Electronics
- Publisher
- American Institute of Physics, Melville, NY
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Décharge électrique Fabrication microélectronique Gallium Arséniure Gravure ionique réactive Gravure plasma Bore(trichloro) Vitesse gravure
- Keyword (en)
- Electric discharge Microelectronic fabrication Gallium Arsenides Reactive ion etching Plasma etching Etch rate
- Keyword (es)
- Descarga eléctrica Fabricación microeléctrica Galio Arseniuro Grabado iónico reactivo Grabado plasma
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 4021903
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1116/1.586679 
https://dx.doi.org/10.1116/1.586679
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