Study of the equilibrium processes in the gas phase during silicon carbide sublimation
- Author
- LILOV, S. K
Univ. Sofia, fac. physics, dep. semiconductor physics, 1126 Sofia, Bulgaria - Source
Materials science & engineering. B, Solid-state materials for advanced technology. 1993, Vol 21, Num 1, pp 65-69 ; ref : 7 ref
- ISSN
- 0921-5107
- Scientific domain
- Chemical industry parachemical industry; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Keyword (fr)
- Composition chimique Composé binaire Domaine température 1000-4000 K Effet température Equilibre phase Monocristal Phase gazeuse Propriété thermodynamique Silicium carbure Stoechiométrie Sublimation C Si SiC
- Keyword (en)
- Chemical composition Binary compounds Temperature range 1000-4000 K Temperature effects Phase equilibria Monocrystals Gas phase Thermodynamic properties Silicon carbides Stoichiometry Sublimation
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60D Equations of state, phase equilibria, and phase transitions / 001B60D70 Specific phase transitions / 001B60D70H Solid-vapor transitions
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 4024853
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0921-5107(93)90267-Q 
https://dx.doi.org/10.1016/0921-5107(93)90267-Q
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