Structure-sensitive features of the valence band for disorder in silicon
- Author
- ARTEM'EV, A. V; GALAEV, A. A; MIL'VIDSKII, A. M; PARKHOMENKO, YU. N; KIRSCH, S. G (Translator)
Moscow inst. steel alloys, Russian Federation - Source
Crystallography reports. 1993, Vol 38, Num 3, pp 385-387 ; ref : 4 ref
- CODEN
- CYSTE3
- ISSN
- 1063-7745
- Scientific domain
- Crystallography
- Publisher
- American Institute of Physics, Woodbury, NY
- Publication country
- United States
- Document type
- Article
- Language
- Russian
- Keyword (fr)
- Amorphisation Bande valence Etude expérimentale Etude théorique Rayon X Relation récurrence Silicium Spectrométrie photoélectron Structure électronique Transformation phase
- Keyword (en)
- Amorphization Valence bands Experimental study Theoretical study X radiation Recursion relations Silicon Photoelectron spectroscopy Electronic structure Phase transformations
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60D Equations of state, phase equilibria, and phase transitions / 001B60D70 Specific phase transitions / 001B60D70K Solid-solid transitions
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70A Electron states / 001B70A20 Electron density of states and band structure of crystalline solids
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 4032085
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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