Performance and physical mechanisms in LDD MOS transistor from room to liquid helium temperatures
- Author
- EMRANI, A1 ; HAFEZ, I. M; BALESTRA, F1 ; GHIBAUDO, G1 ; HAOND, M2
[1] CNRS, E.N.S.E.R.G, lab. physique componants semiconducteurs, 38016 Grenoble, France
[2] CNS, CNET, 38243 Meylan, France - Source
Physica status solidi. A. Applied research. 1993, Vol 140, Num 2, pp K115-K118 ; ref : 8 ref
- CODEN
- PSSABA
- ISSN
- 0031-8965
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Wiley-VCH, Berlin
- Publication country
- Germany
- Document type
- Article
- Language
- English
- Keyword (fr)
- Caractéristique fonctionnement Dispositif semiconducteur Etude expérimentale Silicium Transistor MOS Transistor effet champ
- Keyword (en)
- Performance characteristic Semiconductor device Experimental study Silicon MOS transistor Field effect transistor
- Keyword (es)
- Característica funcionamiento Dispositivo semiconductor Estudio experimental Silicio Transistor MOS Transistor efecto campo
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 4034894
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1002/pssa.2211400244 
https://dx.doi.org/10.1002/pssa.2211400244
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