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Performance and physical mechanisms in LDD MOS transistor from room to liquid helium temperatures

Author
EMRANI, A1 ; HAFEZ, I. M; BALESTRA, F1 ; GHIBAUDO, G1 ; HAOND, M2
[1] CNRS, E.N.S.E.R.G, lab. physique componants semiconducteurs, 38016 Grenoble, France
[2] CNS, CNET, 38243 Meylan, France
Source

Physica status solidi. A. Applied research. 1993, Vol 140, Num 2, pp K115-K118 ; ref : 8 ref

CODEN
PSSABA
ISSN
0031-8965
Scientific domain
Crystallography; Electronics; Metallurgy, welding; Condensed state physics
Publisher
Wiley-VCH, Berlin
Publication country
Germany
Document type
Article
Language
English
Keyword (fr)
Caractéristique fonctionnement Dispositif semiconducteur Etude expérimentale Silicium Transistor MOS Transistor effet champ
Keyword (en)
Performance characteristic Semiconductor device Experimental study Silicon MOS transistor Field effect transistor
Keyword (es)
Característica funcionamiento Dispositivo semiconductor Estudio experimental Silicio Transistor MOS Transistor efecto campo
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
4034894

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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