Passivation of GaSb by sulfur treatment
- Author
- PEROTIN, M1 ; COUDRAY, P1 ; GOUSKOV, L1 ; LUQUET, H1 ; LLINARES, C1 ; BONNET, J. J2 ; SOONCKINDT, L2 3 ; LAMBERT, B
[1] Univ. Montpellier II, cent. electronique Montpellier, 34095 Montpellier, France
[2] Univ. Montpellier II, lab. études surfaces interfaces composants, 34095 Montpellier, France
[3] CNET, 22301 Lannion, France - Source
Journal of electronic materials. 1994, Vol 23, Num 1, pp 7-12 ; ref : 22 ref
- CODEN
- JECMA5
- ISSN
- 0361-5235
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Circuit intégré Diode avalanche Diode barrière Schottky Dispositif semiconducteur Etude expérimentale Fabrication microélectronique Gallium Antimoniure Passivation Propriété optique Propriété électrique Sulfuration
- Keyword (en)
- Integrated circuit Avalanche diode Schottky barrier diode Semiconductor device Experimental study Microelectronic fabrication Gallium Antimonides Passivation Optical properties Electrical properties Sulfurization
- Keyword (es)
- Circuito integrado Diodo avalancha Diodo barrera Schottky Dispositivo semiconductor Estudio experimental Fabricación microeléctrica Galio Antimoniuro Pasivación Propiedad óptica Propiedad eléctrica Sulfurización
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 4044531
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1007/BF02651260 
https://dx.doi.org/10.1007/BF02651260
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