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New phenomena of charge damage in plasma etching : heavy damage only through dense-line antenna

Author
HASHIMOTO, K
Fujitsu Ltd, LSI wafer process div., Nakahara-ku, Kawasaki 211, Japan
Conference title
Microprocess
Conference name
MPC 93. Conference (6 ; Hiroshima 1993-07-22)
Author (monograph)
HORIIKE, Y (Editor)1 ; GAMO, K (Editor); SHIBATA, T (Editor); KANAYAMA, T (Editor); ITO, T (Editor); NAGATA, K (Editor); UENO, T (Editor)
Japan Society of Applied Physics, Tokyo, Japan (Funder/Sponsor)
American Vacuum Society, New York NY, United States (Funder/Sponsor)
IEEE. Electron Device Group, United States (Funder/Sponsor)
[1] Hiroshima univ., fac. eng;, Japan
Source

Japanese journal of applied physics. 1993, Vol 32, Num 12B, pp 6109-6113 ; 1 ; ref : 10 ref

CODEN
JJAPA5
ISSN
0021-4922
Scientific domain
Crystallography; Optics; Condensed state physics; Physics; Plasma physics
Publisher
Japanese journal of applied physics, Tokyo
Publication country
Japan
Document type
Conference Paper
Language
English
Keyword (fr)
Antenne Circuit intégré Etude expérimentale Fabrication microélectronique Gravure plasma Résonance cyclotronique électronique
Keyword (en)
Antenna Integrated circuit Experimental study Microelectronic fabrication Plasma etching Electron cyclotron resonance
Keyword (es)
Antena Circuito integrado Estudio experimental Fabricación microeléctrica Grabado plasma Resonancia ciclotrónica electrónica
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
4064572

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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