Suppression of boron penetration in P+ polysilicon gate P-MOSFET's using low-temperature gate-oxide N2O anneal
- Author
- MA, Z. J1 ; CHEN, J. C1 ; LIU, Z. H; KRICK, J. T1 ; CHENG, Y. C; HU, C1 ; KO, P. K1
[1] Univ. California, dep. EECS, Berkeley CA 94720, United States - Source
IEEE electron device letters. 1994, Vol 15, Num 3, pp 109-111 ; ref : 16 ref
- CODEN
- EDLEDZ
- ISSN
- 0741-3106
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Azote protoxyde Bore Etude expérimentale Fabrication microélectronique Polycristal Profil dopage Propriété électrique Pénétration Recuit thermique Silicium Suppression Transistor MOS Transistor effet champ B N O N2O Si
- Keyword (en)
- Nitrogen protoxide Boron Experimental study Microelectronic fabrication Polycrystal Doping profile Electrical properties Penetration Thermal annealing Silicon Suppression MOS transistor Field effect transistor
- Keyword (es)
- Nitrógeno protóxido Boro Estudio experimental Fabricación microeléctrica Policristal Perfil doping Propiedad eléctrica Penetración Recocido térmico Silicio Supresión Transistor MOS Transistor efecto campo
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 4072669
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/55.285386 
https://dx.doi.org/10.1109/55.285386
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