Study of structural relaxation processes of nonequilibrium states in quench-condensed indium films with hydrogen impurities below 5 K
- Author
- BELEVTSEV, B. I; KOMNIK, YU. F; VATSUK, L. A
Ukrainian acad. sci., inst. low temperature physics eng., 310164 Kharkov, Ukraine - Source
Physica status solidi. B. Basic research. 1994, Vol 183, Num 1, pp 175-183 ; ref : 18 ref
- CODEN
- PSSBBD
- ISSN
- 0370-1972
- Scientific domain
- Crystallography; Electronics; Nanotechnologies, nanostructures, nanoobjects; Condensed state physics
- Publisher
- Wiley, Berlin
- Publication country
- Germany
- Document type
- Article
- Language
- English
- Keyword (fr)
- Addition hydrogène Concentration impureté Couche mince Diffusion(transport) Domaine température 0-13 K Dépendance température Etude expérimentale Hors équilibre Indium Matériau dopé Paramètre cristallin Relaxation structurale In:H
- Keyword (en)
- Hydrogen additions Impurity density Thin films Diffusion Temperature range 0-13 K Temperature dependence Experimental study Nonequilibrium Indium Doped materials Lattice parameters Structure relaxation
- Keyword (es)
- Concentración impureza Relajación estructural
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A14 Electron diffraction and scattering
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology
- Discipline
- Metals. Metallurgy Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 4072981
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1002/pssb.2221830113 
https://dx.doi.org/10.1002/pssb.2221830113
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