Surface and interface study of titanium nitride on Si substrate produced by dynamic ion beam mixing method
- Author
- YOUNG WHOAN BEAG1 ; TARUTANI, M1 ; KYUNG-YOUL MIN1 ; KIUCHI, M; SHIMIZU, R1
[1] Osaka univ., dep. applied physics, Suita, Osaka 565, Japan - Source
Japanese journal of applied physics. 1994, Vol 33, Num 4A, pp 2025-2030 ; 1 ; ref : 14 ref
- CODEN
- JJAPA5
- ISSN
- 0021-4922
- Scientific domain
- Crystallography; Optics; Condensed state physics; Physics; Plasma physics
- Publisher
- Japanese journal of applied physics, Tokyo
- Publication country
- Japan
- Document type
- Article
- Language
- English
- Keyword (fr)
- Croissance film Diffraction électron Etude expérimentale Faisceau ion MET Microstructure Titane nitrure N Ti TiN Composé minéral Métal transition composé
- Keyword (en)
- Film growth Electron diffraction Experimental study Ion beams TEM Microstructure Titanium nitrides Inorganic compounds Transition element compounds
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15J Ion and electron beam-assisted deposition; ion plating
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 4075996
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1143/JJAP.33.2025 
https://dx.doi.org/10.1143/JJAP.33.2025
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