Ordering and disordering of doped Ga0.5In0.5P
- Author
- KURTZ, S. R; OLSON, J. M; FRIEDMAN, D. J; KIBBLER, A. E; ASHER, S
National renewable energy lab., Golden CO 80401, United States - Source
Journal of electronic materials. 1994, Vol 23, Num 5, pp 431-435 ; ref : 22 ref
- CODEN
- JECMA5
- ISSN
- 0361-5235
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Addition zinc Bande interdite CVD Caractéristique capacité tension Composé ternaire Couche mince Densité porteur charge Etude expérimentale Gallium phosphure Indium phosphure Matériau dopé Matériau semiconducteur Structure bande Transformation ordre désordre Ga In P Ga0,5In0,5P:Zn Composé minéral
- Keyword (en)
- Zinc additions Energy gap CVD CV characteristic Ternary compounds Thin films Carrier density Experimental study Gallium phosphides Indium phosphides Doped materials Semiconductor materials Band structure Order-disorder transformations Inorganic compounds
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C20 Surface and interface electron states / 001B70C20A Surface states, band structure, electron density of states
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C61 Electrical properties of specific thin films / 001B70C61E Iii-v semiconductors
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 4100969
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1007/BF02671225 
https://dx.doi.org/10.1007/BF02671225
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