Effect of GaAs/AlGaAs quantum-well structure on refractive index
- Author
- CHIH-HSIANG LIN; MEESE, J. M; WROGE, M. L; CHUN-JEN WENG
Univ. Missouri-Columbia, dep. electrical computer eng., Columbia MO 65211, United States - Source
IEEE photonics technology letters. 1994, Vol 6, Num 5, pp 623-625 ; ref : 13 ref
- ISSN
- 1041-1135
- Scientific domain
- Electronics; Optics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Aluminium arséniure Composé binaire Composé ternaire Gallium arséniure Indice réfraction Matériau semiconducteur Modulateur optique Puits quantique Réflexion Al As Ga AlGaAs As Ga GaAs Composé minéral
- Keyword (en)
- Aluminium arsenides Binary compounds Ternary compounds Gallium arsenides Refractive index Semiconductor materials Optical modulators Quantum wells Reflection Inorganic compounds
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B40 Fundamental areas of phenomenology (including applications) / 001B40B Optics / 001B40B79 Optical elements, devices, and systems / 001B40B79H Optical processors, correlators, and modulators
- Discipline
- Physics : optics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 4115422
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/68.285560 
https://dx.doi.org/10.1109/68.285560
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